SI4463DY vishay siliconix new product document number: 71819 s-20117?rev. a, 11-mar-02 www.vishay.com 1 p-channel 2.5-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) - 20 0.014 @ v gs = - 4.5 v -13 - 20 0.020 @ v gs = - 2.5 v -11 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 s g d p-channel mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d -13 -9 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d -10 -7 a pulsed drain current i dm -50 a continuous source current (diode conduction) a i s - 2.7 - 1.36 maximum power dissipation a t a = 25 c p d 3.0 1.5 w maximum power dissipation a t a = 70 c p d 1.9 0.95 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 33 42 maximum junction-to-ambient a steady state r thja 70 84 c/w maximum junction-to-foot (drain) steady state r thjf 16 21 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4463DY vishay siliconix new product www.vishay.com 2 document number: 71819 s-20117?rev. a, 11-mar-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 16 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 16 v, v gs = 0 v, t j = 70 c -10 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 4.5 v -30 a drain source on state resistance a r ds( ) v gs = - 4.5 v, i d = - 13 a 0.009 0.014 drain-source on-state resistance a r ds(on) v gs = - 2.5 v, i d = - 11 a 0.013 0.020 forward transconductance a g fs v ds = - 10 v, i d = - 13 a 50 s diode forward voltage a v sd i s = - 2.7 a, v gs = 0 v - 0.65 - 1.1 v dynamic b total gate charge q g 46 70 gate-source charge q gs v ds = - 10 v, v gs = - 4.5 v, i d = - 13 a 9 nc gate-drain charge q gd 13.2 turn-on delay time t d(on) 35 55 rise time t r v dd = - 10 v, r l = 10 45 70 ns turn-off delay time t d(off) v dd = - 10 v , r l = 10 i d - 1 a, v gen = - 4.5 v, r g = 6 160 240 ns fall time t f 140 210 gate resistance r g 3.2 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/ s 55 80 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 0246810 v gs = 5 thru 2.5 v t c = - 55 c 125 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 2 v 1.5 v
SI4463DY vishay siliconix new product document number: 71819 s-20117?rev. a, 11-mar-02 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 1600 3200 4800 6400 8000 048121620 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 20406080100 0.000 0.006 0.012 0.018 0.024 0.030 0 1020304050 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 13 a i d - drain current (a) v gs = 4.5 v i d = 13 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 02468 t j = 25 c i d = 13 a 50 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 2.5 v t j = 150 c v gs = 4.5 v
SI4463DY vishay siliconix new product www.vishay.com 4 document number: 71819 s-20117?rev. a, 11-mar-02 typical characteristics (25 c unless noted) 0 120 200 40 80 power (w) single pulse power, junction-to-ambient time (sec) 160 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 10 1 0.01 0.001
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